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IPB031N08N5ATMA1
Infineon IPB031N08N5ATMA1 is an 80 V N-channel OptiMOS 5 power MOSFET in a surface-mount D2PAK package, featuring a maximum RDS(on) of 3.1 mΩ at VGS = 10 V.
Ürün Özeti
IPB031N08N5ATMA1 is an Infineon OptiMOS 5 N-channel industrial power MOSFET supplied in a 3-pin PG-TO263-3 / D2PAK surface-mount package. The device is rated for a maximum drain-source voltage of 80 V and a maximum continuous drain current of 120 A at 25°C. Its maximum on-state resistance is 3.1 mΩ at VGS = 10 V, while the typical total gate charge is 69 nC. The specified operating temperature range is -55°C to +175°C. The complete orderable part number IPB031N08N5ATMA1 is listed by Infineon with tape-and-reel packaging of 1000 pieces. Current price, availability, MOQ, packaging, date code and lead time must be reconfirmed at the time of RFQ.
Temel Teknik Özellikler
| Özellik | Değer |
|---|---|
| Seri | OptiMOS 5 |
| Paket / Kasa | D2PAK (TO-263), PG-TO263-3 |
| Montaj Tipi | Yüzey Montaj |
| Çalışma Sıcaklığı | -55°C to +175°C |
| Transistor Type | N Kanallı Güç MOSFET |
| Rds On | 3.1 max @ VGS = 10 V mΩ |
| Continuous Drain Current | 120 max @ 25°C A |