CPJ07A
WATECH
Preliminary engineering reference for a 3.7ā4.2 GHz integrated LDMOS asymmetric Doherty power amplifier for cellular base station and RF infrastructure evaluation.
Transistors, diodes, MOSFETs and other discrete semiconductor devices for power control, signal switching and industrial applications.
Showing 1ā3 of 3 results in "Semiconductors"
WATECH
Preliminary engineering reference for a 3.7ā4.2 GHz integrated LDMOS asymmetric Doherty power amplifier for cellular base station and RF infrastructure evaluation.
WATECH
3.7ā4.2 GHz integrated LDMOS asymmetric Doherty power amplifier for cellular base station and RF infrastructure applications.
Infineon Technologies
Infineon IPB031N08N5ATMA1 is an 80 V N-channel OptiMOS 5 power MOSFET in a D2PAK / PG-TO263-3 surface-mount package, with a maximum RDS(on) of 3.1 mĪ© at VGS = 10 V.