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IPB031N08N5ATMA1
Infineon IPB031N08N5ATMA1 is an 80 V N-channel OptiMOS 5 power MOSFET in a D2PAK / PG-TO263-3 surface-mount package, with a maximum RDS(on) of 3.1 mΩ at VGS = 10 V.
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Product Summary
IPB031N08N5ATMA1 is an Infineon OptiMOS 5 industrial N-channel power MOSFET for efficient power switching applications. The device is rated for a maximum drain-source voltage of 80 V and a maximum continuous drain current of 120 A at 25°C. Its maximum on-state resistance is 3.1 mΩ at VGS = 10 V, while the typical total gate charge is 69 nC. It is supplied in a PG-TO263-3 / D2PAK surface-mount package and has a specified operating temperature range of -55°C to +175°C. Current price, availability, MOQ, date code, packaging condition and lead time must be confirmed at the time of RFQ.
Key Specifications
| Attributes | Value |
|---|---|
| Series | OptiMOS 5 |
| Package / Case | D2PAK (TO-263), PG-TO263-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ +175°C |
| Transistor Type | N-Channel Power MOSFET |
| Rds On | 3.1 max @ VGS = 10 V mΩ |
| Continuous Drain Current | 120 max @ 25°C A |
| Drain Source Voltage |