SemiconductorsActive
Infineon Technologies
IKW30N60H3FKSA1 is a 600 V TRENCHSTOP™ IGBT from Infineon with an integrated anti-parallel free-wheeling diode, optimized for high-speed hard-switching power applications in a TO-247 package.
Series:TRENCHSTOP IGBT3Vce Sat:1.95 VIgbt Type:Trench Field Stop
SemiconductorsActive
Infineon Technologies
IRFB4127PBF is a high-performance N-channel power MOSFET designed for high-current switching applications, including motor drives, power converters and industrial electronic systems.
Series:IRFB SeriesDimensions:10.16 x 15.75 mmTechnology:Power MOSFET
SemiconductorsActive
Infineon Technologies
Infineon IPB031N08N5ATMA1 is an 80 V N-channel OptiMOS 5 power MOSFET in a D2PAK / PG-TO263-3 surface-mount package, with a maximum RDS(on) of 3.1 mΩ at VGS = 10 V.
Rds On:3.1 max @ VGS = 10 V mΩSeries:OptiMOS 5Gate Charge:69 typ. @ VGS = 10 V nC