CPJ07A
WATECH
Preliminary engineering reference for a 3.7ā4.2 GHz integrated LDMOS asymmetric Doherty power amplifier for cellular base station and RF infrastructure evaluation.
P1db:48.4 dBmP3db:49 dBmDimensions:12 Ć 7 Ć 2.1 mm
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WATECH
Preliminary engineering reference for a 3.7ā4.2 GHz integrated LDMOS asymmetric Doherty power amplifier for cellular base station and RF infrastructure evaluation.
WATECH
3.7ā4.2 GHz integrated LDMOS asymmetric Doherty power amplifier for cellular base station and RF infrastructure applications.
Infineon Technologies
Infineon IPB031N08N5ATMA1 is an 80 V N-channel OptiMOS 5 power MOSFET in a D2PAK / PG-TO263-3 surface-mount package, with a maximum RDS(on) of 3.1 mĪ© at VGS = 10 V.