CPJ07A
WATECH
Preliminary engineering reference for a 3.7–4.2 GHz integrated LDMOS asymmetric Doherty power amplifier for cellular base station and RF infrastructure evaluation.
晶体管、二极管、MOSFET及其他分立半导体器件，适用于电源控制、信号开关和工业电子应用。
显示第 1–6 项，共 6 个产品 (位于 "半导体")
WATECH
Preliminary engineering reference for a 3.7–4.2 GHz integrated LDMOS asymmetric Doherty power amplifier for cellular base station and RF infrastructure evaluation.
WATECH
3.7–4.2 GHz integrated LDMOS asymmetric Doherty power amplifier for cellular base station and RF infrastructure applications.
Infineon Technologies
IKW30N60H3FKSA1 is a 600 V TRENCHSTOP™ IGBT from Infineon with an integrated anti-parallel free-wheeling diode, optimized for high-speed hard-switching power applications in a TO-247 package.
Infineon Technologies
Infineon IPB031N08N5ATMA1 is an 80 V N-channel OptiMOS 5 power MOSFET in a D2PAK / PG-TO263-3 surface-mount package, with a maximum RDS(on) of 3.1 mΩ at VGS = 10 V.
Infineon Technologies
IRFB4127PBF is a high-performance N-channel power MOSFET designed for high-current switching applications, including motor drives, power converters and industrial electronic systems.
STMicroelectronics
VNQ5027AK-E is an automotive-grade quad-channel high-side driver from STMicroelectronics featuring analog current sense, protection functions and low on-state resistance for resistive and inductive loads.