关键参数
优先核对封装、耐压、电流、温度范围和生命周期。
Discrete semiconductor devices including transistors, diodes, thyristors, and optoelectronics for power control, signal switching, and light emission applications.
优先核对封装、耐压、电流、温度范围和生命周期。
替代料需同时匹配电气边界、脚位/封装和认证要求。
关注 NRND/EOL、批次一致性、原厂来源和跨境交付限制。
5 个产品 in 半导体
Vishay Intertechnology
High-speed small signal silicon switching diode, 100V PIV, 200mA, 4ns recovery, DO-35 glass package.
ON Semiconductor
Schottky barrier rectifier diode with low forward voltage drop, 40V, 1A, DO-41 package.
ON Semiconductor
NPN silicon general-purpose amplifier and switching transistor, 40V, 800mA, TO-92 package.
NXP Semiconductors
General-purpose triac for AC power switching, 600V, 4A RMS, sensitive gate, TO-220 package.
Infineon Technologies
N-Channel enhancement-mode power MOSFET, 55V, 49A, 17.5mΩ R_DS(on), TO-220 package.